Title:
【発明の名称】半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP2521783
Kind Code:
B2
Abstract:
The present invention relates to a semiconductor device employed for high power use and a method of manufacturing the same. According to the present invention, a temperature detecting device is formed on the same substrate with a power device. Thus, there is no need to add an external temperature sensor, whereby the device can be reduced in size. Further, an abnormal temperature of the power device is accurately detected by the temperature detecting device, whereby thermal breakdown of the power device is reliably prevented.
Inventors:
FUKUNAGA MASANORI
GOORABU MAJUUMUDAARU
GOORABU MAJUUMUDAARU
Application Number:
JP996488A
Publication Date:
August 07, 1996
Filing Date:
January 19, 1988
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L27/02; H01L27/04; H01L29/10; H01L29/78; H02H5/04; H03K17/14; H01L29/08; (IPC1-7): H01L29/78
Domestic Patent References:
| JP55117267A | ||||
| JP58123755A |
Attorney, Agent or Firm:
Shigeaki Yoshida (2 outside)