Title:
【発明の名称】化学気相成長装置及び半導体装置の製造方法
Document Type and Number:
Japanese Patent JP3081860
Kind Code:
B2
More Like This:
Inventors:
Naoyuki Suenaga
Koichiro Tsutahara
Koichiro Tsutahara
Application Number:
JP27289792A
Publication Date:
August 28, 2000
Filing Date:
October 12, 1992
Export Citation:
Assignee:
Ryoden Semiconductor System Engineering Co., Ltd.
Mitsubishi Electric Corporation
Mitsubishi Electric Corporation
International Classes:
C23C14/54; C23C16/455; C30B25/14; H01L21/205; H01L21/31; (IPC1-7): H01L21/205; C23C16/455; C30B25/14; H01L21/31
Domestic Patent References:
JP1281137A | ||||
JP6321821A | ||||
JP435031A | ||||
JP44738U | ||||
JP171442U |
Attorney, Agent or Firm:
Kaneo Miyata (2 outside)