Title:
RESONANCE TUNNEL BIPOLAR TRANSISTOR
Document Type and Number:
Japanese Patent JP2576417
Kind Code:
B2
Abstract:
PURPOSE: To obtain a resonance tunnel bipolar transistor in which a better negative resistance is realized while enhancing β by eliminating a quantum well structure causing storage of carriers from the carrier travel path between emitter and collector thereby reducing the recoupled current on the emitter-base interface and in the quantum well.
CONSTITUTION: An n-type collector layer 2 and a p-type base layer 3 are formed sequentially on a semiconductor substrate 10. A quantum well structure 4 for forming the quantum level of hole and a p-type contact layer 5 are then formed sequentially at a part of the p-type base layer 3. An n-type emitter layer 6 is formed at other parts on the p-type base layer 5. The n-type collector layer 2, the p-type contact layer 5, and the n-type emitter layer 6 are provided, respectively, with a collector electrode 8C, a base electrode 9, and an emitter electrode 8E making ohmic contact therewith. The inventive bipolar transistor is characterized that the quantum well structure 4 is provided selectively only under the base electrode 9 on the base layer 3.
Inventors:
ANDO JUJI
Application Number:
JP20523494A
Publication Date:
January 29, 1997
Filing Date:
August 30, 1994
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L29/68; H01L21/331; H01L29/205; H01L29/73; H01L29/737; (IPC1-7): H01L29/68; H01L21/331; H01L29/205; H01L29/73
Domestic Patent References:
| JP7273311A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)