PURPOSE: To improve a quality by growing a single crystal to a prescribed thickness or above on a garnet substrate in a melt consisting of Ho2O3, Tb2O3, Fe2O3, PbO, Bi2O3 and B2O3 at a specific B2O3 concentration.
CONSTITUTION: Ho2O3, Tb2O3, Fe2O3, PbO and Bi2O3 are blended in a prescribed weight ratio and then B2O3 is added and blended therewith so as to become 1.6 to 2.3wt.%. The blend is sufficiently mixed and heated and melted and a garnet single crystal substrate is immersed in the melt and the melt is subjected to epitaxial growth while keeping the melt temperature to 700-900°C. Single crystal is grown for a prescribed time to provide the objective Bi- substituted magnetic garnet single crystal expressed by the formula HoxTbyBi3-x-yFe5O12 (0.3≤Y/X≤1.0; 1.6≤X+Y≤1.8) and having ≤25/cm2 internal bit number.
SUMIYA MAKOTO
TAKEDA NORIO
ARII KOZO
