【発明の名称】焦電型赤外線撮像素子及びその製造方法

Japanese Patent JP2502693

B2

PURPOSE:To prepare a pyroelectric type infrared imaging element at high yield by bringing said element to a such a structure that a pyroelectric thin film showing a high capacity index is used and the heat conduction from the pyroelectric thin film to a charge transmitting element decreases sharply. CONSTITUTION:A pyroelectric thin film 2 composed of components represented by formula I is grown on a MgO single crystal substrate 1 cleaved along a surface (100) and subjected to mirror surface polishing so as to reach a thickness of 3mum by a high frequency magnetron sputtering method. At this time, a gaseous mixture of Ar and O2 is used and a powder of {0.8 PLT + 0.2 PbO} is used as a sputtering target. A plurality of NiCr electrode thin film groups 3 having a thickness of about 0.2mum are formed on said thin film 2 by vapor deposition. These thin film groups 3 are arranged two-dimensionally by photolithographic technique and an org. thin film 3 is provided thereon in a thickness of 4mum and contact holes 5 are provided to a part of the thin film groups 3 and an NiCr electrode group 6 is formed on membrane 4 to be connected to the thin film groups 3 by take-out electrodes 7. A CrAu film is formed on the electrode group 6 and Au bumps 8 are formed thereon while the electrode group 6 is thermally bonded to the Al electrode group 11 on the input diode 10 of a charge transmitting element 9 under pressure and an NiCr light detecting electrode thin film 13 is formed to the surface on the side of the substrate of the thin film 2.

TAKAYAMA RYOICHI
TOMITA YOSHIHIRO
NOMURA KOJI
OGAWA KUNI
ABE ATSUSHI

JP17124488A

May 29, 1996

July 08, 1988

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MATSUSHITA ELECTRIC IND CO LTD

G01J1/02; G01J1/44; H04N5/335; H04N5/369; H04N5/372; (IPC1-7): G01J1/02; H04N5/335

Tomoyuki Takimoto

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