PURPOSE: To provide a hetero-epitaxial growing method by which a high-quality epitaxial layer of a III-V Gs compound semiconductor is obtained by remarkably reducing the occurrence of crystal defects caused by lattice mismatching between the III-V compound semiconductor and silicon.
CONSTITUTION: In this method for epitaxially growing compound semiconductors, after an n--type silicon epitaxial layer and an Si3N4 film are successively formed on a p+-type silicon substrate, part of the silicon substrate is made porous by patterning the epitaxial layer and Si3N4 film and anodizing the substrate. Then the porous layer is converted into an SiO2 layer by thermal oxidation and the Si3N4 film is removed with hot phosphoric acid. After the Si3N4 film is removed, a III-V compound semiconductor layer is epitaxially grown on the patterned n--type silicon epitaxial layer.
MAEHASHI KENZO
HASEGAWA SHIGEHIKO
ITO TOSHIMICHI
HIRAKI AKIO
SHIRAKI YASUHIRO
KOUKADO KOUICHI
SHIMAZU MITSURU
KIMURA HIROYA
SHIRAKAWA FUTATSU
