SEMICONDUCTOR LASER AND ITS MANUFACTURE

Title:

SEMICONDUCTOR LASER AND ITS MANUFACTURE

Document Type and Number:

Japanese Patent JPH0730190

Kind Code:

A

Abstract:

PURPOSE: To obtain improved current-light output characteristics and at the same time a reliable semiconductor and its manufacture.

CONSTITUTION: A step 14 protruding in an overhang shape is provided on a second electrode formation surface near a laser light emission end face, a recessed part 19 is formed at the bottom surface side of the step 14, and the center side of a second electrode 2 is completely separated from an edge part second electrode 2b. Therefore, even if a voltage is applied to the electrode at a center side, no current flows to the lower part of the edge part side second electrode 2b and the area near the laser light emission end face part is a current non-infection region, thus positively preventing the deterioration of characteristics of semiconductor laser due to a local heat build-up without changing the structure near the active layer greatly influencing the characteristics of the semiconductor laser and a current constriction structure.

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Inventors:

IGAWA KATSUHIKO
SHAKUDA YUKIO
MATAGI HIROYUKI

Application Number:

JP17025193A

Publication Date:

January 31, 1995

Filing Date:

July 09, 1993

Export Citation:

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Assignee:

ROHM CO LTD

International Classes:

H01S5/00; H01S5/042; (IPC1-7): H01S3/18

Domestic Patent References:

JPH03231483A	1991-10-15
JPS59155979A	1984-09-05

Attorney, Agent or Firm:

Keiji Saki (2 outside)

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