Title:
MANUFACTURE OF GRAIN BOUNDARY INSULATING SEMICONDUCTOR PORCELAIN
Document Type and Number:
Japanese Patent JP2506286
Kind Code:
B2
Abstract:
PURPOSE: To improve the stability of a gain boundary insulating semiconductor porcelain by applying heat treatment to a semiconductor porcelain under the atmosphere of specified metal or this compound.
CONSTITUTION: A cylindrical semiconductor porcelain 1 consisting of the sintered body being the aggregate of semiconductor particles 2 is obtained. Insulating matter paste consisting of Bi2O3 (bismuth oxide) and an organic binder is applied by screen printing on the surface of the semiconductor porcelain 1 so as to form an insulating matter layer 3. Next, it is heat-treated in air (oxidative atmosphere) so as to produce a grain boundary insulating layer 4 between semiconductor particles 2. Next, the semiconductor porcelain 1 is heat-treated in the region which includes one or more kinds of metal being selected from copper(Cu), chromium(Cr), cobalt(Co), nickel(Ni), silver-(Ag), zinc(Zn), manganese(Mn), and iron, or this compound. By this reheat treatment, the surplus insulating matter inside the grain boundary insulating layer 3 is discharged from the semiconductor porcelain 1, and the grain boundary insulating layer 4 by the uniform distribution of the insulating matter becomes stable.
Inventors:
YAMAGISHI JUNICHI
IGUCHI YOSHIAKI
IGUCHI YOSHIAKI
Application Number:
JP31409191A
Publication Date:
June 12, 1996
Filing Date:
October 31, 1991
Export Citation:
Assignee:
TAIYO YUDEN KK
International Classes:
H01G4/12; (IPC1-7): H01G4/12; H01G4/12
Domestic Patent References:
| JP53142650A | ||||
| JP279407A |
Attorney, Agent or Firm:
Takano Noritsuji