Title:
【発明の名称】ホ―ル効果装置
Document Type and Number:
Japanese Patent JP2512018
Kind Code:
B2
Abstract:
PURPOSE:To enhance a diffusion yield by a method wherein a high-purity semiinsulating epitaxial layer is grown on a semiinsulating substrate and an active layer is formed in it by ion implantation. CONSTITUTION:A high-purity semiinsulating epitaxial layer 8 with an impurity concentration of 10<14>-10<15>/cm<2> is grown to be 1mum or more on a bulky substrate 1; an active layer 4 to be used as a Hall-effect detection part is formed on its surface by using a selective ion implantation operation. Accordingly, the active layer 4 can be formed on the high-purity epitaxial layer 8; a stable device can be supplied without being influenced directly by an etched pit density and an impurity on the bulky semiinsulating substrate 1; an unbalanced voltage is reduced; a difference in a Hall output voltage is reduced. By this setup, a diffusion yield is enhanced.
Inventors:
KOTANI JUTARO
TARA KATSUJI
NANBU SHUTARO
TARA KATSUJI
NANBU SHUTARO
Application Number:
JP25293487A
Publication Date:
July 03, 1996
Filing Date:
October 07, 1987
Export Citation:
Assignee:
MATSUSHITA ELECTRONICS CORP
International Classes:
H01L43/06; (IPC1-7): H01L43/06
Attorney, Agent or Firm:
Tomoyuki Takimoto