PURPOSE: To provide the title strain semiconductor film having high quality and reliability by relaxing the restriction on the critical film thickness posing a problem when the strain semiconductor film is to be grown.

CONSTITUTION: The second semiconductor 12 having a different lattice constant from that of the first semiconductor is formed on a substrate comprising the first semiconductor 11 in about the critical film thickness in a dual heterostructure and successively the third semiconductor 13 having the strain in the reverse direction to that of a semiconductor layer lattice-matching with the first semiconductor 11 or the second semiconductor 12 is formed. At this time, the step of forming the second semiconductor 12 is to be performed either at low growing temperature not damaging the crystallinity or making use of surfactant. Through these procedures, the title strain semiconductor layer can have high quality with the layer thickness thereof restricted to the range within about the critical film thickness in a dual heterostructure thereby enabling the excellent reliability upon element manufacturing process to be stably placed.