Title:
METHOD OF MANUFACTURING CONTACT OF MULTI-LAYERED METAL WIRING STRUCTURE
Document Type and Number:
Japanese Patent JP2561602
Kind Code:
B2
Abstract:
PURPOSE: To improve step coverage by forming a contact hole using a SOG film or polyimide for flattening an interlayer insulating layer between metal wirings.
CONSTITUTION: A first conductive layer pattern 2 is formed on an upper part of a silicon substrate 1, on an upper part of which a second conductive layer pattern 4 with many steps is formed through an insulating layer 3. A first interlayer insulating layer 5A is formed into a predetermined thickness over the entire of an upper part of the second conductive layer pattern 4, and then a spin-on-glass(SOG) film 6 is applied on the first interlayer insulating layer in a flattening manner. A photosensitive film pattern is formed on the SOG film 6, and the lower SOG film 6 is etched isotropically to expose the first interlayer insulating layer 5A on the first conductive layer pattern 2 for removal of the photosensitive film pattern. The second interlayer insulating layer 7 and the first interlayer insulating layer 5 are etched in a drying manner whereby there are formed first and second contact holes 8A, 8B in which the lower second conductive layer patterns 4A, 4B are exposed with no step part.
Inventors:
KIN SAIKO
SON GON
SON GON
Application Number:
JP32327192A
Publication Date:
December 11, 1996
Filing Date:
December 02, 1992
Export Citation:
Assignee:
GENDAI DENSHI SANGYO KK
International Classes:
H01L21/768; H01L21/28; (IPC1-7): H01L21/768; H01L21/28
Domestic Patent References:
| JP3268326A | ||||
| JP63229840A | ||||
| JP4109620A | ||||
| JP1215044A | ||||
| JP4162626A | ||||
| JP373521A | ||||
| JP5206290A |
Attorney, Agent or Firm:
Hitoko Tsuda (1 person outside)