Title:
SEMICONDUCTOR DEVICE WITH BIPOLAR TRANSISTOR TO BE FORMED IN LAYER OF SEMICONDUCTOR MATERIAL PROVIDED ON INSULATED BASE
Document Type and Number:
Japanese Patent JPH077012
Kind Code:
A
Abstract:
PURPOSE: To form a bipolar transistor provided with a small base, which is formed to be smaller than the limit dimension of photolithographics inside a semiconductor material layer provided on an insulating substrate. CONSTITUTION: A collector zone 4, a base zone 5 and an emitter zone 6 are formed under a band 3 of an insulation material in a semiconductor material 2. Two contact regions 8 and 9 are connected to the base zone 5. In the meantime, a third contact region 10 which is positioned between the two contact regions 8 and 9, is connected to the emitter region 6. The three contact regions 8, 9 and 10 positioned side by side on the same side of the band 3 are alternately provided in the layer 2 of the semiconductor material and in an other layer 19 of the semiconductor material to the band 3. The three contact regions 8, 9 and 10 are provided with mutual intervals smaller than a realizable fine part in a photoresist layer by a photolythographic processing used in the manufacture of transistors. As a result, the transistor is provided with a very small base.
Inventors:
MAAS HENRICUS GODEFRIDUS R (NL)
DEKKER RONALD (NL)
PRUIJMBOOM ARMAND (NL)
DEKKER RONALD (NL)
PRUIJMBOOM ARMAND (NL)
Application Number:
JP9566394A
Publication Date:
January 10, 1995
Filing Date:
April 07, 1994
Export Citation:
Assignee:
KONINKL PHILIPS ELECTRONICS NV (NL)
International Classes:
H01L29/73; H01L21/331; H01L29/735; (IPC1-7): H01L21/331; H01L29/73
Attorney, Agent or Firm:
Masao Sawada
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