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Title:
【発明の名称】半導体化炭素薄膜の製造方法
Document Type and Number:
Japanese Patent JP2521953
Kind Code:
B2
Inventors:
WATANABE MISUZU
KAWAKAMI KAZUHIKO
MORIKAWA YOSHIKI
Application Number:
JP11859187A
Publication Date:
August 07, 1996
Filing Date:
May 15, 1987
Export Citation:
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Assignee:
MEIDENSHA ELECTRIC MFG CO LTD
International Classes:
H01L21/203; C23C14/06; C23C14/34; (IPC1-7): H01L21/203; C23C14/06; C23C14/34
Attorney, Agent or Firm:
Fujiya Shiga



 
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