Title:
UNIFORM DOPING OF HEMISPHERICAL GRANULAL SURFACE POLYCRYSTALINE SILICON
Document Type and Number:
Japanese Patent JPH0714797
Kind Code:
A
Abstract:
PURPOSE: To allow more uniform doping on a rough surface polysilicon layer and on a bottom polysilicon layer. CONSTITUTION: A polycrystalline silicon layer 30 is doped uniformly, independent of other layer of a semiconductor substrate 10. In a chamber, the semiconductor substrate 10 having a silicon dioxide layer 20 formed on a polysilicon layer 15 is prepared. Then on the silicon dioxide layer, the silicon layer 30 of a rough surface, which is doped on the spot is formed. In that case, the silicon layer 30 is vapor-deposited on the silicon dioxide layer 20 by rapid-heating chemical vapor-deposition method or low-pressure chemical vapor-deposition method, and the silicon layer 30 is exposed to a source gas and a dopant gas, and energy to preferably form, a bottom part polysilicon layer 15 which is doped uniformly on the spot and the polysilicon layer 30 of rough surface.
Inventors:
CHIYAARUZU TAANAA
RANDEIIRU PII ESU TATSUKAA
RANDEIIRU PII ESU TATSUKAA
Application Number:
JP14071094A
Publication Date:
January 17, 1995
Filing Date:
June 01, 1994
Export Citation:
Assignee:
MICRON SEMICONDUCTOR INC
International Classes:
H01L21/22; H01L21/02; H01L21/3215; H01L21/334; H01L21/822; H01L21/8242; H01L27/04; H01L27/10; H01L27/108; (IPC1-7): H01L21/22; H01L27/04; H01L21/822; H01L21/8242; H01L27/108
Attorney, Agent or Firm:
Hiroaki Tazawa (1 person outside)