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Title:
PRODUCTION OF PZT THIN FILM AND SPUTTERING DEVICE
Document Type and Number:
Japanese Patent JPH0657412
Kind Code:
A
Abstract:

PURPOSE: To provide the PZT thin film having a prescribed compsn. and crystal structure by supplying incident lead on substrates in an excessive amt. in such a manner that the films attain prescribed stoichiometric compsn. ratios at a high substrate temp. by using targets of prescribed combinations.

CONSTITUTION: The films are deposited on the substrates 30 while a substrate holder 28 is rotated at 30rpm speed by supplying 300W electric power to 3 pieces of the PZT targets 16, 18, 20 and 0 to 45W electric power to one piece of the PbO target 22. The thin films of the single phase of perovskite are obtd. when the incident atomic flux ratio of the lead on the substrates is controlled in such a manner that the Pb/(Zr+Ti) ratio in the film attains ≥1 at 700°C substrate temp.


Inventors:
HIRATA KAZUO
HASE TAKU
SAKUMA TOSHIYUKI
MIYASAKA YOICHI
Application Number:
JP28115692A
Publication Date:
March 01, 1994
Filing Date:
September 28, 1992
Export Citation:
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Assignee:
ANELVA CORP
NEC CORP
International Classes:
C23C14/08; C23C14/34; H01B3/00; H01B3/12; (IPC1-7): C23C14/08; C23C14/34; H01B3/00; H01B3/12
Domestic Patent References:
JPS62272402A1987-11-26
JPS646306A1989-01-10
JPS63224187A1988-09-19
JPH02217468A1990-08-30
JPS61266565A1986-11-26
JPS60191207A1985-09-28
JPH0196368A1989-04-14
JPH03215304A1991-09-20
JPS62113034A1987-05-23
JPH04147964A1992-05-21
Attorney, Agent or Firm:
Suzuki Toshiyuki



 
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