SOLID-STATE IMAGE PICK-UP DEVICE AND MANUFACTURE THEREOF

Title:

SOLID-STATE IMAGE PICK-UP DEVICE AND MANUFACTURE THEREOF

Document Type and Number:

Japanese Patent JPH0567767

Kind Code:

A

Abstract:

PURPOSE: To provide an image pick-up device having a sufficient dielectric strength and without a smear or a white flaw in a reproduced image.

CONSTITUTION: A p-type well 2 is formed on a silicon substrate 1. An n--type region 3 and a p-type region 4 for a photodiode, and an n-type region 5, a p+-type region 6, and a p+-type region 7 for a vertical CCD unit are formed in the p-type well 2, and also a p++-type region 8 is formed on the n--type region for the photodiode. Moreover, a gate oxide film 9, a silicon nitride film 10, and a polysilicon electrode 11 are provided on the silicon substrate 1. On the surface of the polysilicon electrode 11, a polysilicon oxide film 21, a silicon nitride film 22, and an upper oxide film 23 are formed. The upper oxide film 23 has been formed in a thermal oxidation step from a silicon nitride film 22.

Inventors:

KAMISAKA WATARU
OKADA HIROYUKI
DEGUCHI YASUYUKI

Application Number:

JP4673892A

Publication Date:

March 19, 1993

Filing Date:

March 04, 1992

Export Citation:

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Assignee:

MATSUSHITA ELECTRONICS CORP

International Classes:

H01L27/14; H01L27/148; H01L31/0216; (IPC1-7): H01L27/14; H01L27/148

Attorney, Agent or Firm:

Akira Kobiji (2 outside)

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