Title:
MEASURING METHOD FOR TEMPERATURE CHARACTERISTIC OF SEMICONDUCTOR WAFER
Document Type and Number:
Japanese Patent JPH0729950
Kind Code:
A
Abstract:
PURPOSE: To acquire a method for measuring temperature characteristic of an IC circuit, etc., which is formed on a semiconductor wafer.
CONSTITUTION: In a semiconductor wafer 3 wherein a semiconductor circuit component 1 is formed on a core part and electrodes 2, 2... are arranged in a peripheral part thereof, the electrodes 2...2 and an measurement instrument are connected through probes 4...4 and characteristics of the circuit component is measured by changing temperature conditions. It is desirable that the electrode forms a rectangle, the probe is attached to the electrode parallel to a long side of thereof, and the electrode is arranged so that the long side thereof is parallel to any of sides forming the rectangular wafer 3.
More Like This:
Inventors:
GOTO NOBORU
Application Number:
JP17138293A
Publication Date:
January 31, 1995
Filing Date:
July 12, 1993
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
G01R1/067; H01L21/66; (IPC1-7): H01L21/66; G01R1/067
Attorney, Agent or Firm:
Tetsuji Ueshiro (2 outside)
Next Patent: INSPECTION DEVICE