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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0513680
Kind Code:
A
Abstract:

PURPOSE: To increase capacitance of a power supply line without increasing an area of a semiconductor device so as to suppress a fluctuation in potential by forming a power source capacitor using an unused function cell in a logic circuit.

CONSTITUTION: An unused electrode 2 among electrodes placed at an end of a semiconductor substrate 1 is used to construct a capacitor 20. That is, the unused electrode 2 comprises the first electrode plate 21 formed on the substrate 1 with an insulation layer 5 interposed similarly to a wiring layer of the first layer and the second electrode plate 22 formed on the first electrode plate 21 with the insulation layer 5 further interposed. Thus a power supply capacitor is formed without giving influence to an area and a structure of a semiconductor device to increase capacitance of a power source circuit, so that a fluctuation in potential can be suppressed even if there is a sudden fluctuation in consumption current.


Inventors:
NATORI KANJI
Application Number:
JP26615791A
Publication Date:
January 22, 1993
Filing Date:
October 15, 1991
Export Citation:
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Assignee:
SEIKO EPSON CORP
International Classes:
H01L27/04; H01L21/822; (IPC1-7): H01L27/04
Attorney, Agent or Firm:
Minoru Yamada