Title:
【発明の名称】半導体受光装置
Document Type and Number:
Japanese Patent JP3061203
Kind Code:
B2
Abstract:
PURPOSE:To obtain a super-lattice avalanche diode which is wide in bandwidth and low in noise by a method wherein the thicknesses of a first semiconductor thin film possessed of a first band gap and a second semiconductor thin film possessed of a second band gap larger than the first band gap are so set as to satisfy a prescribed relation between them. CONSTITUTION:A super-lattice multiplying layer is composed of an InGaAs well layer 5nm in width Lw and an InAlAs barrier layer 15nm in width Lb of 15nm, and the superlattice multiplying layer is 0.35mum in overall thickness. A superlattice avalanche photodiode is composed of an N electrode 1, a P electrode 2, an N-InP substrate 3, an N-InAlAs buffer layer 4, an undoped superlattice multiplying layer 5, a P-InAlAs electric field relaxing layer 6, a P-InGaAs light absorbing layer 7, a P-InAlAs buffer layer 8, a P-InGaAs contact layer 9, and a polyimide passivation film 10. An element is made to grow in crystal through a molecular beam epitaxy method, and a mesa is formed through a wet etching method with a Br solution.
Inventors:
Hitoshi Nakamura
Shoichi Hanatani
大▲歳▼ 創
Shigehisa Tanaka
Yasunobu Matsuoka
Koji Ishida
Shoichi Hanatani
大▲歳▼ 創
Shigehisa Tanaka
Yasunobu Matsuoka
Koji Ishida
Application Number:
JP6147891A
Publication Date:
July 10, 2000
Filing Date:
March 26, 1991
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
H01L27/14; H01L29/86; H01L31/107; (IPC1-7): H01L31/107
Domestic Patent References:
| JP4206577A | ||||
| JP254974A | ||||
| JP338888A | ||||
| JP2137376A |
Attorney, Agent or Firm:
Katsuo Ogawa (1 person outside)