PURPOSE: To stabilize switching operations and to improve display quality by specifying a sputtering pressure and specifying the inter-lattice distance of the c-axis of a Ta film at the time of forming the Ta electrode layer of MIM (metal-insulation-metal) type nonlinear elements constituting a matrix array.

CONSTITUTION: The MIM type nonlinear elements 1 are constituted of the Ta electrode layer 102 conducted and connected to a driving circuit side, a TaOx film 103 formed by anodic oxidation on the surface of the Ta electrode layer and the Cr electrode layer 105 conducted and connected to pixel electrodes 104 which are formed on the front surface side thereof and consist of transparent conductive films in picture element regions 2 of the matrix array. The crystal structure of the Ta film 102 is so formed that ≥90% of the structural ratio is constituted of β-Ta and that the inter-lattice distance of the c-axis of the β-Ta film is ≥1.338. Namely, the prescribed interlattice distance at which the c-axis does not change is obtd. if the film is formed under a sputtering pressure of ≤0.2Pa pressure at the time of forming the Ta layer 102 by sputtering.