Title:
PRODUCTION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0669221
Kind Code:
A
Abstract:
PURPOSE: To provide a method of manufacturing a semiconductor device, which allows the formation of a narrow diffused area such as a base without nonuniformity in the diffused area widths in the depth direction.
CONSTITUTION: A part of a semiconductor part 10 positioned in an insulating part 2 is removed, conductor is buried in the removed part 10' and a diffused area 41 is formed by using the conductor as a diffusing source. A part of the insulating part 2 is removed using the conductor as a mask and at least a part of the conductor buried in the removed part 10' of the semiconductor part 10 is exposed and the exposing part is selectively silicified.
Inventors:
MIWA HIROYUKI
Application Number:
JP16026592A
Publication Date:
March 11, 1994
Filing Date:
May 27, 1992
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/28; H01L21/331; H01L27/12; H01L29/73; H01L29/732; (IPC1-7): H01L21/331; H01L21/28; H01L27/12; H01L29/73
Attorney, Agent or Firm:
Toru Takatsuki