PURPOSE: To obtain a semiconductor device excellent in the forward direction, reverse direction, and switching characteristics having an increased ratio of the forward current effective area whereby to determine the ratio of the effective channel width corresponding to the cell size.
CONSTITUTION: The surface of one conductive type semiconductor 1 is arranged in a configuration having irregularities 5 and 6. A first inverted conductive semiconductor region 2a is formed on the upper part of the extrusion 6, and a second inverted conductive semiconductor region 2b is formed at the bottom of the extrusion or at the bottom including a part of the sides. Then, a metallic layer to form a Schottky or ohmic contact is arranged at least on one side of the extrusion which is located between the first and second regions.
TANAKA MITSUGI
KURI SHINJI
| JPS60227476A | 1985-11-12 | |||
| JP3061342U | 1999-09-17 | |||
| JPS6212169A | 1987-01-21 |