Title:
METHOD FOR MAKING THICKNESS OF SI SINGLE CRYSTAL THIN FILM UNIFORM
Document Type and Number:
Japanese Patent JP2519138
Kind Code:
B2
Abstract:
PURPOSE: To reduce the nonuniformity of the thickness of an Si single crystal thin film and make the thickness of the thin film uniform by forming an oxide film to be thinner in the thicker film area and thicker in the thinner film area and then performing oxidation treatment.
CONSTITUTION: The surface of an Si single crystal thin film is divided in response to the thickness. Oxide films 11 and 12 of the prescribed thickness are formed on the both surfaces of the film by the thermal oxidation of a base wafer 10. A bond wafer 13 is adhered on the oxide film 11. An oxide film 14 is formed on the top surface of the bond wafer 13. Then, leaving the thickest first area, other parts are masked with a masking material 15, and the oxide film is removed by etching to a certain depth. the same process is performed for other areas successively and repeatedly. The oxide film is formed thinner in the thicker area and oxidation treatment is performed. Thus, the oxide film thickness in the thick film area becomes relatively thin and the thickness of the whole thin film is made uniform.
Inventors:
ABE TAKAO
NAKAZATO YASUAKI
UCHAMA ATSUO
NAKAZATO YASUAKI
UCHAMA ATSUO
Application Number:
JP21590291A
Publication Date:
July 31, 1996
Filing Date:
July 31, 1991
Export Citation:
Assignee:
SHINETSU HANDOTAI KK
NAGANO DENSHI KOGYO KK
NAGANO DENSHI KOGYO KK
International Classes:
H01L21/306; H01L27/12; (IPC1-7): H01L27/12; H01L21/306
Attorney, Agent or Firm:
High Toshihiko No
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