Title:
METHOD OF FORMING ETCHING MASK
Document Type and Number:
Japanese Patent JPH0582487
Kind Code:
A
Abstract:
PURPOSE: To contrive a reduction in the area of a chip by a method wherein the diameter of a through hole, which is formed in an etching mask for contact hole use, is made small.
CONSTITUTION: A first etching mask 17, of which the side 22 on one side of the sidewall of a through hole 21 is formed, is provided on a layer 12 to be etched on a substrate 11 in a first process and after that, a second etching mask 19, of which the other side 23 of the sidewall of the hole 21 is formed, is provided on the layer 12 in a state that the mask 19 overlaps with one part of the mask 17 in a second process.
Inventors:
MATSUSHITA TAKESHI
Application Number:
JP27003991A
Publication Date:
April 02, 1993
Filing Date:
September 20, 1991
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/302; H01L21/3065; H01L21/3205; (IPC1-7): H01L21/302; H01L21/3205
Attorney, Agent or Firm:
Funabashi Kuninori
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