Title:
FORMING METHOD FOR RESIST PATTERN
Document Type and Number:
Japanese Patent JP3027633
Kind Code:
B2
Abstract:
PURPOSE: To form a super-fine resist pattern by directly forming a pattern corresponding to a phase shifter in a phase shift photomask on a resist applied on a substrate.
CONSTITUTION: An upper layer resist pattern 10 is obtd. by exposing to g ray 14 and developing, and then a lower resist film 8 is exposed to i ray 12 with using a stepper in the area between a source electrode 4 and a train electrode 5. In this process, the upper layer resist pattern 10 acts as a phase shift layer for the i ray 12 and the edge of the upper layer resist pattern 10 acts as a fine light shielding part. Thereby, the lower layer resist film 8 except for the area corresponding to the edge of the pattern 10 is exposed to light. By developing the lower layer resist film 8, a super-fine resist pattern 16 for a gate can be obtd.
Inventors:
Hiroyuki Nakamura
Application Number:
JP26227791A
Publication Date:
April 04, 2000
Filing Date:
October 09, 1991
Export Citation:
Assignee:
Dai Nippon Printing Co.,Ltd.
International Classes:
G03F7/11; G03F7/20; G03F7/26; H01L21/027; (IPC1-7): G03F7/26; G03F7/11; G03F7/20; H01L21/027
Domestic Patent References:
| JP221681A | ||||
| JP6447085A | ||||
| JP6370425A | ||||
| JP62198855A | ||||
| JP24262A | ||||
| JP62165651A | ||||
| JP63157421A |
Attorney, Agent or Firm:
Hiroshi Nirazawa (7 outside)