PURPOSE: To prevent contamination by metallic impurities and to stably attain high quality by specifying the oxygen content of an SiC-based member for production of a semiconductor consisting of SiC and metallic Si.
CONSTITUTION: A mixture of high purity SiC powder with high purity graphite powder and an oxygen source compd. such as silicone resin having Si-O bonds is granulated, compacted and heated at about 800°C in gaseous N2 to obtain a calcined body. This calcined body is heated to about 1,500°C in vacuum and molten high purity metallic Si is impregnated into the calcined body. The resulting Si impregnated body is sintered at 1,600-1,800°C to produce the objective SiC-based member for production of a semiconductor contg. ≥50ppm oxygen and having a structure in which SiC forms a three-dimensional continuous phase as the matrix and many metallic Si islands are separately dispersed in the continuous phase.
KONO OSAMU
TAJIMA SHIGENOBU
