Title:
【発明の名称】優れた被覆層を用いるSOI半導体装置の製造方法
Document Type and Number:
Japanese Patent JP2554180
Kind Code:
B2
Abstract:
An improved technique for forming silicon-on insulator films for use in integrated circuits. The technique provides an improved encapsulation layer (4,5) to enable in a reproducible way the zone melt recrystallization of such films. The encapsulation layer consists of a first layer (4) of a doped SiO2 (silicate glass) on which a further layer (5) of Si3N4 is deposited. The doped SiO2 forms a fusible glassy material which is rendered semi-liquid and flows at the temperatures used in recrystallization. The softening of the encapsulation material accommodates volume expansion and eliminates the biaxial stresses in the layered structure. The Si3N4 layer adds mechanical strength to the SiO2 layer and improves the wetting angle.
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Inventors:
HERUMATSUTO BAUMUGARUTO
ANDORE MAATEINZU
ANDORE MAATEINZU
Application Number:
JP33683289A
Publication Date:
November 13, 1996
Filing Date:
December 27, 1989
Export Citation:
Assignee:
FUIRITSUPUSU EREKUTORONIKUSU NV
International Classes:
H01L21/02; H01L21/20; H01L21/263; H01L21/84; H01L27/12; (IPC1-7): H01L21/20; H01L27/12
Domestic Patent References:
| JP59158514A | ||||
| JP6119116A |
Attorney, Agent or Firm:
Akihide Sugimura (1 outside)