Title:
MANUFACTURE OF INSULATING FILM
Document Type and Number:
Japanese Patent JP3018627
Kind Code:
B2
Abstract:
PURPOSE: To enable an SiO2 insulating film of high quality to be formed by a method wherein the temperature of a substrate where an insulating film is formed, the flow rate ratio of SiH4 to O2, gas pressure, and a high frequency power are kept in a prescribed range respectively.
CONSTITUTION: An electron cyclotron resonance plasma CVD device is equipped with a plasma generating chamber 5, an exciting solenoid 4, and a specimen table 10 where a film-formed substrate 9 is placed, and an SiO2 insulating film is formed on the substrate 9 is through the device concerned using O2 and SiH4 as material gas. In this case, the SiO2 insulating film is formed under such conditions that the substrate 9 is set to a temperature of 200-300°C, the flow rate ratio SiH4/O2 is set to 0.85-0.92, gas pressure is 1×10-4-5×10-3Torr, a high frequency electric power is set to 2.0-4.0W/cm2 per unit area of the specimen table 10. By this setup, an SiO2 film of high quality can be formed.
Inventors:
Mitsuo Sasaki
Genichi Katagiri
Akio Shimizu
Naoto Tsuji
Makoto Toraguchi
Genichi Katagiri
Akio Shimizu
Naoto Tsuji
Makoto Toraguchi
Application Number:
JP22081291A
Publication Date:
March 13, 2000
Filing Date:
September 02, 1991
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
C23C16/40; C23C16/511; G01N24/14; G01R33/64; H01L21/31; H01L21/316; H05H1/16; (IPC1-7): H01L21/316; C23C16/40; G01R33/64; H01L21/31; H05H1/16
Domestic Patent References:
| JP529300A | ||||
| JP513404A | ||||
| JP529482A | ||||
| JP4308088A | ||||
| JP3170666A | ||||
| JP3120822A |
Attorney, Agent or Firm:
Masaharu Shinobe