Title:
【発明の名称】半導体装置及び半導体装置の製造方法
Document Type and Number:
Japanese Patent JP3095564
Kind Code:
B2
Abstract:
A diffused layer serves as a source and a drain. It is formed comprised of a deep first diffused layer and a shallow second diffused layer positioned between the first diffused layer and the channel region. In the second diffused region, a distribution in a depth direction of carriers has a profile in which the concentration is more than 5x1018 cm-3 at the peak and is in correspondence with a carrier concentration of the semiconductor substrate at a depth less than 0.04 mu m. Since the second diffused layer has a high concentration, the short-channel effect can be suppressed. As the second diffused region, a solid phase diffusion source such as an impurity doped silicate glass is used.
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Inventors:
Takashi Yoshitomi
Masanobu Saito
Toshiyo Momose
Hiroshi Iwai
Yukihiro Ushiku
Ono Hakata
Yasushi Akasaka
Hideaki Arai
Satoshi Matsuda
Yasuhiro Katsumata
Masanobu Saito
Toshiyo Momose
Hiroshi Iwai
Yukihiro Ushiku
Ono Hakata
Yasushi Akasaka
Hideaki Arai
Satoshi Matsuda
Yasuhiro Katsumata
Application Number:
JP35232492A
Publication Date:
October 03, 2000
Filing Date:
December 11, 1992
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/033; H01L21/225; H01L21/28; H01L21/336; H01L21/8238; H01L27/092; H01L29/08; H01L29/423; H01L29/78; (IPC1-7): H01L29/78; H01L21/336
Domestic Patent References:
| JP423462A | ||||
| JP5310282A | ||||
| JP3218025A | ||||
| JP29134A | ||||
| JP485371A | ||||
| JP5191675A |
Attorney, Agent or Firm:
Hideaki Togawa