Title:
【発明の名称】半導体素子の製造方法
Document Type and Number:
Japanese Patent JP2522000
Kind Code:
B2
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Inventors:
OOWADA SATOSHI
Application Number:
JP33601387A
Publication Date:
August 07, 1996
Filing Date:
December 29, 1987
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/52; H01L21/66; (IPC1-7): H01L21/52
Domestic Patent References:
| JPS62290141A | ||||
| JP53121440B | ||||
| JPS50142179A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)