MANUFACTURE OF SEMICONDUCTOR DEVICE - FUJI FILM MICRO DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH0637090

Kind Code:

A

Abstract:

PURPOSE: To flatten a surface of a layer insulating film to become a base of a metal wiring layer by coating the insulating layer with a flattened layer, curing it, then coating with other flattened layer, and curing it.

CONSTITUTION: A low temperature oxide layer 11 is covered with a metal wiring layer 7, coated with a resist layer 13, an Si substrate 1 is heated, and the layer 13 is cured. Then, the layer 13 is coated with other resist layer 18, the substrate 1 is heated, and the layer 18 is cured. A rugged surface 14 on the surface of the layer 13 formed initially is further flattened, and a surface 16 of the other layer 18 is substantially flattened. Since the surface of the layer 18 is flattened, the surface etched back thereafter becomes substantially flat.

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Inventors:

SAIDA TAKASHI
TORIHATA SADAJI
OKAWA HARU

Application Number:

JP19238892A

Publication Date:

February 10, 1994

Filing Date:

July 20, 1992

Export Citation:

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Assignee:

FUJI FILM MICRO DEVICE
FUJI PHOTO FILM CO LTD

International Classes:

H01L21/302; H01L21/027; H01L21/3065; H01L21/3205; (IPC1-7): H01L21/3205; H01L21/027; H01L21/302

Attorney, Agent or Firm:

Keishiro Takahashi (2 outside)

Next Patent: 土木・建設機械の油圧駆動装置