Title:
【発明の名称】超電導薄膜の作製方法
Document Type and Number:
Japanese Patent JP2544761
Kind Code:
B2
Abstract:
PURPOSE:To obtain a superconducting thin film of a compound oxide having high critical current density, by preparing a superconducting thin film of a compound oxide containing a specific compound oxide as a main component by using a physical vapor deposition process at a specific film-forming speed. CONSTITUTION:A superconducting thin film of a compound oxide composed mainly of a compound oxide expressed by formula is produced by a physical vapor deposition process at a film-forming rate of 0.01-5Angstrom /sec. In the formula, Ln in one or more lanthanoid elements selected from La, Nd, Sm, Eu, Gd, Dy, Ho, Y, Er and Yb and x is 0<=x<1. In the case of performing the physical vapor deposition by sputtering, it is preferably performed under a pressure of 0.01-0.3Torr in an atmosphere containing 5-95mol% of O2. The other sputtering gas able to be used in combination with O2 is preferably argon which is an inert gas.
Inventors:
TANAKA SABURO
ITOZAKI HIDEO
HIGAKI KENJIRO
YATSU SHUJI
JODAI TETSUJI
ITOZAKI HIDEO
HIGAKI KENJIRO
YATSU SHUJI
JODAI TETSUJI
Application Number:
JP32470387A
Publication Date:
October 16, 1996
Filing Date:
December 22, 1987
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C01G3/00; C01G1/00; C04B41/87; C23C14/08; C23C14/22; C23C14/24; C23C14/35; H01B12/00; H01B12/06; H01B13/00; H01L39/24; (IPC1-7): C01G3/00; C01G1/00; C04B41/87; C23C14/08; C23C14/24; H01B12/00; H01L39/24
Domestic Patent References:
| JP6435819A | ||||
| JP6414814A |
Attorney, Agent or Firm:
Takashi Koshiba