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Title:
INSULATED-GATE BIPOLAR TRANSISTOR
Document Type and Number:
Japanese Patent JPH0595118
Kind Code:
A
Abstract:

PURPOSE: To build a current detection function in an IGBT element.

CONSTITUTION: In a cell region 100 of an IGBT, electron is injected to an n- layer 3 through an n+ source layer 5 and a channel from a source electrode 10 when a unit cell is on. Accordingly, a p-n junction 12 becomes forward bias and hole is injected to the n- layer 3 from a p+ layer 2. In the process, electron also flows in below a p layer 6 of a detection part 101 and injection of hole is also generated in the detection part 101. The excessive hole is made to flow to a source electrode 10 through a p layer 6. At this time, electric potential in accordance with the product of a transverse resistance of the p layer 6 and a hole current 23 appears to a source electric potential in a detection electrode 11 which is set through a contact hole 15 to the p layer 6. An element current can be converted by detecting the electric potential.


Inventors:
OKABE NAOTO
TOKURA NORIHITO
Application Number:
JP25394891A
Publication Date:
April 16, 1993
Filing Date:
October 01, 1991
Export Citation:
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Assignee:
NIPPON DENSO CO
International Classes:
H01L29/78; H01L27/02; H01L27/04; H01L29/10; H01L29/739; (IPC1-7): H01L29/784
Domestic Patent References:
JPS63306669A1988-12-14
JPS62165964A1987-07-22
Attorney, Agent or Firm:
Hirohiko Usui