METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Title:

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH0722320

Kind Code:

A

Abstract:

PURPOSE: To eliminate the surface dependence of a substrate underneath layer, accelerating the film forming rate while improving the morphology of the sub strate surface by a method wherein the substrate surface is processed using an organic compound or solution thereof before vapor depositing step so as to make the substrate surface adsorb an organic radical.

CONSTITUTION: An aluminum (Al) film 3 and a titanium nitride (TiN) film 4 are formed. Next, a plasma oxide film 5 about 5000 thick comprising tetraethoxy silane as an organic silane base compound and oxygen is deposited on the film 4. Next, viaholes 6 are bored through this plasma oxide film 5 by photo-lithography. Next, in order to surface process this wafer fitted to a spin coater, 2-ethoxyethanol is dripped on the wafer to be dried up later. Finally, this surface processed wafer is carried to a film formation chamber so as to deposit the other aluminum (Al) films 7.

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Inventors:

NAKANO TADASHI
SATO NOBUYOSHI
OOTA TOMOHIRO

Application Number:

JP16282593A

Publication Date:

January 24, 1995

Filing Date:

June 30, 1993

Export Citation:

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Assignee:

KAWASAKI STEEL CO

International Classes:

H01L21/205; (IPC1-7): H01L21/205

Attorney, Agent or Firm:

Akihide Sugimura (5 outside)

Next Patent: PLASMA CVD DEVICE