NONVOLATILE SEMICONDUCTOR MEMORY

Title:

NONVOLATILE SEMICONDUCTOR MEMORY

Document Type and Number:

Japanese Patent JPH0750349

Kind Code:

A

Abstract:

PURPOSE: To decrease manufacturing cost by forming a control gate and a floating gate with a single layer conductive film.

CONSTITUTION: On the side of a polycrystal Si film 14a, which is a control gate, a polycrystal Si film 14b which is a floating gate is arranged. Between the counter surfaces 34 of respective polycrystal Si films 14a and 14b, a polycrystal Si film 33 is embedded via a SiO2 film 32. Consequently, even though polycrystal Si films 14a and 14b are separate from each other planarily, there are large capacitance coupling coefficients of polycrystal Si films 14a and 14b. Hence, this enables a channel hot electron 36 generated on the drain side end of a channel 35 under the polycrystal Si film 14a to be injected only to the polycrystal Si film 14b.

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Inventors:

NAKAJIMA HIDEHARU

Application Number:

JP21509793A

Publication Date:

February 21, 1995

Filing Date:

August 06, 1993

Export Citation:

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Assignee:

SONY CORP

International Classes:

H01L21/8247; H01L29/788; H01L29/792; (IPC1-7): H01L21/8247; H01L29/788; H01L29/792

Attorney, Agent or Firm:

Tsuchiya Masaru

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