PURPOSE: To provide an etching method at high selection ratio to a base material, and provide a device for performing this etching and an end point judging method, concerning a manufacture device and manufacture method for a semiconductor device, especially, a dry etching device.

CONSTITUTION: A dry etching device has a plasma generation chamber 9 separately from a reaction chamber 8, and the upper electrode 3 of the reaction chamber 8 is provided with an opening. Moreover, etching is performed by adsorbing reactive gas and injecting inert gas, using its device. Hereby, a high level of etching control can be performed, and high selection ratio of etching becomes possible, so it can cope with the thinning, too, of a base film. Moreover, reactive gas can be adsorbed uniformly inside the wafer 5 by making a reactive gas introduction port an upper electrode opening.