Title:
【発明の名称】超電導光機能素子
Document Type and Number:
Japanese Patent JP2503091
Kind Code:
B2
Abstract:
A first type of functional superconductive photo-electric device of the invention is constituted with a superconductive thin film (5) having a photo-conductive effect located between two electrodes (6), and converting from a normally conducting state to a superconductive state in response to a light irradiation thereto, wherein the superconductive thin film (5) is formed of a compound semiconductor of Pb chalcogenide added with Pb and/or In more than its stoicheometry, such as Pb1-xSnxTe+In, so as to generate its precipitations. A second type of the functional superconductive photoelectric device of the invention is constituted with a photo-conductive material (21;31) formed of Pb1-xSnxTe filled in a gap between two superconductive electrodes (22a,22b;32a,32b), wherein the gap width (d) is shorter than 500 times of a coherence length of the super-conductivity. In either type of the invention, when a infrared light is irradiated onto the photo-conductive region (5,21;31) at a predetermined temperature, the coherence length of the superconductivity is extended so as to convert its normally conducting state to superconductive state. On ON/OFF of irradiation of a light shorter than 0.8 mu m, Pb1-xSnxTe without In switches between the normally-conducting/superconducting states. With In addition, the material persistently converts the state from normally conducting state to the superconductive state.
Inventors:
SHINOHARA KOJI
OOTSUKI OSAMU
MURASE KAZUO
TAKAOKA SADAO
OOTSUKI OSAMU
MURASE KAZUO
TAKAOKA SADAO
Application Number:
JP6455190A
Publication Date:
June 05, 1996
Filing Date:
March 14, 1990
Export Citation:
Assignee:
FUJITSU KK
MURASE KAZUO
MURASE KAZUO
International Classes:
H01L31/0264; H01L39/10; H01L39/16; H01L39/22; (IPC1-7): H01L31/0264; H01L39/22
Attorney, Agent or Firm:
Teiichi