Title:
【発明の名称】不揮発性シャドウ・メモリセル
Document Type and Number:
Japanese Patent JP3080624
Kind Code:
B2
Abstract:
A non-volatile shadow memory cell utilizing a level shifting input/output circuit to charge and discharge at least a single Fowler-Nordheim tunneling element (20K), characterized in that said level shifting input/output circuit comprises a latching circuit (Q46K and Q50K), a coupling capacitor (C26K), a first drive transistor (Q44K) having a gate electrode connected to a first logic signal source (D) and a second drive transistor (Q48K) having a gate electrode connected to a second logic signal source (D).
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Inventors:
Horst reuschner
Application Number:
JP19428888A
Publication Date:
August 28, 2000
Filing Date:
August 03, 1988
Export Citation:
Assignee:
SGS Thomson Microelectronics Ink.
International Classes:
G11C14/00; G11C17/00; G11C16/04; (IPC1-7): G11C14/00; G11C17/00
Domestic Patent References:
| JP54150955A | ||||
| JP6083374A |
Attorney, Agent or Firm:
Keiko Okabe (1 person outside)