Title:
SEMICONDUCTOR ELEMENT AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPH0645613
Kind Code:
A
Abstract:
PURPOSE: To provide a semiconductor element wherein the area occupied by the element inside the plane of a substrate is small and to provide its manufacturing method.
CONSTITUTION: In a semiconductor element and its manufacturing method, a drain electrode 8 and a source electrode 9 are formed respectively of conductor layers 3, 7 at the tip part and the root part of a pillar-shaped crystal 2 formed in a semiconductor substrate 1 and, in addition, a gate electrode 10 is formed, by using the layerlike structure of a semiconductor layer 5 and of insulator layers 4, 6, between the conductor layers 3, 7 and in a prescribed region on the side face of the pillar-shaped crystal 2.
Inventors:
SHIBATA MOTOJI
OKAJIMA MICHIO
KUSUMOTO OSAMU
YOKOYAMA KAZUO
TODA TAKAO
OKAJIMA MICHIO
KUSUMOTO OSAMU
YOKOYAMA KAZUO
TODA TAKAO
Application Number:
JP19859792A
Publication Date:
February 18, 1994
Filing Date:
July 24, 1992
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L29/78; H01L21/336; H01L21/338; H01L29/812; (IPC1-7): H01L29/784; H01L21/338; H01L29/812
Attorney, Agent or Firm:
Masamichi Matsuda
Next Patent: MANUFACTURE OF READ-ONLY SEMICONDUCTOR MEMORY