NANO ELASTIC MEMORY ELEMENT AND ITS MANUFACTURING METHOD

Title:

NANO ELASTIC MEMORY ELEMENT AND ITS MANUFACTURING METHOD

Document Type and Number:

Japanese Patent JP2007067374

Kind Code:

A

Abstract:

To provide a nano elastic memory element and a method for manufacturing it.

The nano elastic memory element comprises a substrate, lower electrodes arrayed in parallel with constant intervals on the substrate, a supporting table of insulating material which has a cavity for exposing the lower electrode and has a specified thickness on the substrate, nano elastic bodies which are vertically extended from the surface of the lower electrode in the cavity and arrayed with constant intervals, and upper electrodes which are so arranged on the supporting table as to cross at right angles to the lower electrodes on the nano elastic bodies.

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Inventors:

CHANG JOO-HAN
KANG DONG-HUN
CHA YOUNG-KWAN
PARK WAN-JUN

Application Number:

JP2006174184A

Publication Date:

March 15, 2007

Filing Date:

June 23, 2006

Export Citation:

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Assignee:

SAMSUNG ELECTRONICS CO LTD

International Classes:

H01L27/10; B81B3/00; B81C1/00; B81C3/00; H01L29/06

Attorney, Agent or Firm:

Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro

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