To obtain a near-infrared cutoff filter that is superior in cuttability for near-infrared rays, that is free from damages or degradation in the optical characteristics, even if incorporated in a solid-state image sensor, and that is suitable for use in luminous efficacy correction of the solid-state image sensor, such as CCDs or CMOSs.

The filter has a structure layered with a cyclic olefin resin substrate and a laminate having a near infrared reflectance film, and further, with a protective film thereon. In the filter, both the peel strength from the laminate surface of the protective film or the peel strength, after being stored for 240 hours under a condition at a temperature of 85 degrees centigrade and a humidity of 85% in either case are not higher than 0.5N. Also, the method of manufacturing the filter is provided.