Title:
NEGATIVE ELECTRODE MATERIAL FOR POWER STORAGE DEVICE, AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2013026187
Kind Code:
A
Abstract:
To provide a negative electrode material for a power storage device suffering very little degradation in discharge capacity over repeated cycles of charging and discharging, and capable of being manufactured easily, and a method for manufacturing the same.
The negative electrode material for a power storage device comprises an oxide substrate, and an active material layer formed on the surface of the oxide substrate and containing Si, Ge, Al, or Sn as a constituent element. The active material layer is preferably composed of metallic Si. Moreover, the thickness of the active material layer is preferably in the range of 20 to 200 nm.
Inventors:
NAGAKANE TOMOHIRO
SHIBATA SHOJI
SAKURAI TAKESHI
SHIBATA SHOJI
SAKURAI TAKESHI
Application Number:
JP2011163074A
Publication Date:
February 04, 2013
Filing Date:
July 26, 2011
Export Citation:
Assignee:
NIPPON ELECTRIC GLASS CO
International Classes:
H01M4/38; H01G11/22; H01M4/36; H01M4/48