Title:
フルオロスルホンアミド含有ポリマーを有するネガ型レジスト組成物およびパターン形成方法
Document Type and Number:
Japanese Patent JP4516963
Kind Code:
B2
Abstract:
A negative resist composition is disclosed, wherein the resist composition includes a polymer having at least one fluorosulfonamide monomer unit having one of the following two formulae: wherein: M is a polymerizable backbone moiety; Z is a linking moiety selected from the group consisting of -C(O)O-, -C(O)-, -OC(O)-, -O-C(O)-C(O)-O-, or alkyl; P is 0 or 1; R1 is a linear or branched alkyl group of 1 to 20 carbons; R2 is hydrogen, fluorine, a linear or branched alkyl group of 1 to 6 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 6 carbons; and n is an integer from 1 to 6. A method of forming a patterned material layer on a substrate is also disclosed, wherein the method includes applying the fluorosulfonamide-containing resist composition to the substrate to form a resist layer on the material layer; patternwise exposing the resist layer to imaging radiation; removing portions of the resist layer not exposed to the imaging radiation to create spaces in the resist layer corresponding to the pattern; and removing portions of the material layer at the spaces formed in the resist layer, thereby forming a patterned material layer.
Inventors:
Lee, wenge
Varanasi, Pushkar, Lao
Varanasi, Pushkar, Lao
Application Number:
JP2006520525A
Publication Date:
August 04, 2010
Filing Date:
June 02, 2004
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
G03F7/033; C08F14/18; C08F20/38; C08F32/04; C08F214/18; G03C1/675; G03C1/73; G03C5/00; G03F7/004; G03F7/038; H01L21/027
Domestic Patent References:
| JP2004212946A | ||||
| JP2004101893A | ||||
| JP2003233185A | ||||
| JP2003076019A |
Foreign References:
| US6420503 |
Attorney, Agent or Firm:
Takeshi Ueno
Tasaichi Tanae
Yoshihiro City
Hiroshi Sakaguchi
Tasaichi Tanae
Yoshihiro City
Hiroshi Sakaguchi