NEGATIVE RESIST COMPOSITION FOR ION BEAM WRITING AND PATTERN FORMING METHOD

Title:

NEGATIVE RESIST COMPOSITION FOR ION BEAM WRITING AND PATTERN FORMING METHOD

Document Type and Number:

Japanese Patent JP2011154264

Kind Code:

A

Abstract:

To provide a negative resist composition for ion beam writing having good thermal stability and storage stability, containing few ionic impurities such as Cl and Na, excellent in transparency in a wide wavelength region, and giving a resist pattern with a large film thickness and a high aspect ratio, and to provide a pattern forming method using the same.

The negative resist composition for ion beam writing comprises (A) a resin which has a polymer unit of formula (1), a polymer unit prepared by ring opening polymerization and hydrogenation of a cyclic olefin, or a vinyl ether polymer unit, and is made slightly soluble or insoluble in a developer upon ion beam irradiation, and (B) at least one organic solvent which dissolves the resin (A). The pattern forming method employs the negative resist composition.

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Inventors:

NISHIKAWA HIROYUKI
KANEKO TOMOKI
IIZUKA TETSUYA
MITA TAKAHITO
TAKEMORI TOSHIIKU

Application Number:

JP2010016632A

Publication Date:

August 11, 2011

Filing Date:

January 28, 2010

Export Citation:

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Assignee:

SHIBAURA INST TECHNOLOGY
MARUZEN PETROCHEM CO LTD

International Classes:

G03F7/038; C08F16/16; C08F32/08; C08G61/08; G03F7/004; H01L21/027

Attorney, Agent or Firm:

Ono International Patent Office

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