Title:
NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP2006163066
Kind Code:
A
Abstract:
To provide a negative resist composition suitable for exposure with light having a wavelength shorter than 200 nm and forming a high resolution resist pattern, and also to provide a resist pattern forming method.
The negative resist composition contains at least: (A) a resin whose alkali solubility is increased by the action of an acid; (B) a polyhydric alcohol compound having a secondary or tertiary alcohol structure on a carbon atom bonding directly to an aromatic ring or an aliphatic ring; and (C) an acid generator component which generates an acid upon exposure, wherein the resin component (A) has high transparency to light having a wavelength shorter than 200 nm.
Inventors:
TSUJI HIROMITSU
IWASHITA ATSUSHI
ENDO KOUTARO
TAKASU RYOICHI
IWASHITA ATSUSHI
ENDO KOUTARO
TAKASU RYOICHI
Application Number:
JP2004355685A
Publication Date:
June 22, 2006
Filing Date:
December 08, 2004
Export Citation:
Assignee:
TOKYO OHKA KOGYO CO LTD
International Classes:
G03F7/038; C08F20/24; C08F32/04; G03F7/004; G03F7/033; H01L21/027
Attorney, Agent or Firm:
Masayuki Masabayashi
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