Title:
新規なエステル化合物、高分子化合物、レジスト材料及びパターン形成方法
Document Type and Number:
Japanese Patent JP4831307
Kind Code:
B2
Abstract:
A polymer comprising recurring units (2) obtained through polymerization of an ester compound of formula (1) is used to form a resist composition. R1 is F or C1-C6 fluoroalkyl, R2 is H or C1-C8 alkyl, R3 is O or C1-C6 alkylene, R4 and R5 each are H or C1-C10 alkyl or fluoroalkyl, and R6 is H or an acid labile group. The resist composition, when processed by ArF lithography, has advantages including improved resolution, transparency, minimal line edge roughness, and etch resistance. The resist composition exhibits better performance when processed by ArF immersion lithography with liquid interposed between a projection lens and a wafer.
Inventors:
Yuji Harada
Jun Hatakeyama
Yoshio Kawai
Masako Sasako
Masataka Endo
Kazuhiko Maeda
Haruhiko Komoriya
Mitsutaka Otani
Jun Hatakeyama
Yoshio Kawai
Masako Sasako
Masataka Endo
Kazuhiko Maeda
Haruhiko Komoriya
Mitsutaka Otani
Application Number:
JP2005349110A
Publication Date:
December 07, 2011
Filing Date:
December 02, 2005
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
Panasonic Corporation
Central Glass Co., Ltd.
Panasonic Corporation
Central Glass Co., Ltd.
International Classes:
C08F20/28; C07D307/93; C07D493/18; C08F220/28; C08F232/08; G03F7/004; G03F7/039; H01L21/027
Domestic Patent References:
JP2002169289A | ||||
JP2002351078A | ||||
JP2005234015A | ||||
JP2005240024A | ||||
JP2005314662A | ||||
JP2006022308A | ||||
JP2006234938A |
Attorney, Agent or Firm:
Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa