Title:
NEW PHOTOCONDUCTIVE FILM AND IMAGE SENSOR ARRAY USING THE SAME
Document Type and Number:
Japanese Patent JPH033372
Kind Code:
A
Abstract:
PURPOSE:To obtain a new photoconductive film wherein large photo-conductivity is given to a polycrystalline Si film, by setting N-type impurity concentration and hydrogen concentration in the polycrystalline Si film in the respective specified ranges, and making the diameter of crystal grain larger than or equal to a specified value. CONSTITUTION:In a polycrystalline Si film, the N-type impurity concentration is 10<16>-10<20> atoms/cm<3>, and hydrogen concentration is 10<19>-10<22> atoms/cm<3>. Grain diameter of the polycrystalline Si is larger than or equal to 200Angstrom . For example, after a film of amorphous silicon is formed on a quartz substrate 1, and crystallized by annealing, a poly Si active layer 2 is patterned, and a gate SiO2 film 3 is formed. Next, an Si film 4 is formed; the pattern of a gate electrode 4' is formed; P<+> ion is implanted in the whole surface, and the N-type impurity concentration is set; a resist cover 6 is formed on a photoelectric conversion part 5; P<+> ions are implanted in the whole surface; after the cover 6 is eliminated, the gate electrode 7, the source.drain 8, 8' of a poly Si TFT and the photoelectric conversion part 5 are activated, and hydrogen plasma processing is performed.
Inventors:
ISHIDA MAMORU
Application Number:
JP13802189A
Publication Date:
January 09, 1991
Filing Date:
May 31, 1989
Export Citation:
Assignee:
RICOH KK
International Classes:
H01L31/0248; H01L27/146; (IPC1-7): H01L27/146; H01L31/0248
Attorney, Agent or Firm:
Eiji Tomomatsu
Next Patent: JPH033373