To provide a sulfonate and a derivative thereof each suitable as a raw material for a photoacid generator in a resist material or as a photoacid generator which can suppress elution into water particularly in ArF immersion exposure, also suppresses formation of a foreign substance peculiar to immersion exposure, and can be effectively used, and a method for producing those.
The sulfonate is represented by general formula (1), wherein R1 is 1-20C alkyl, 6-15C aryl or 4-15C heteroaryl, and M+ is an Li ion, an Na ion, a K ion, an ammonium ion or a tetramethylammonium ion. A sulfonic acid exhibits strong acidity because of partial substitution by fluorine at α,β-positions, facilitates introduction of various substituents, and ensures a wide range of molecular design. A photoacid generator generating the sulfonic acid can be used in various steps in a device manufacturing process without problems, suppresses elution into water in ArF immersion exposure, and reduces the effect of water remaining on a wafer. Since the ester moiety is hydrolyzed under basic conditions, by proper treatment of resist waste liquid, conversion to a low molecular weight low-accumulative compound is possible and combustibility in combustion disposable is high.
OSAWA YOICHI
KANAO GO
WATANABE TAKESHI
| JP2005148291A | 2005-06-09 | |||
| JP2002214774A | 2002-07-31 | |||
| JPH0995479A | 1997-04-08 | |||
| JPH09208554A | 1997-08-12 | |||
| JPH09301948A | 1997-11-25 | |||
| JP2007328060A | 2007-12-20 |
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
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