Title:
窒化物結晶基板
Document Type and Number:
Japanese Patent JP6991013
Kind Code:
B2
Abstract:
There is provided a nitride crystal substrate made of a nitride crystal with a diameter of 100 mm or more, having on its main surface: a continuous high dislocation density region and a plurality of low dislocation density regions divided by the high dislocation density region, with the main surface not including a polarity inversion domain.
Inventors:
Yoshihiro Takehiro
Shibata Masachi
Shibata Masachi
Application Number:
JP2017164405A
Publication Date:
February 03, 2022
Filing Date:
August 29, 2017
Export Citation:
Assignee:
SIOX Co., Ltd.
Sumitomo Chemical Co., Ltd.
Sumitomo Chemical Co., Ltd.
International Classes:
C30B29/38
Domestic Patent References:
JP2012001432A | ||||
JP2012036012A | ||||
JP2009280482A |
Attorney, Agent or Firm:
Masahiro Fukuoka
Hideo Tachibana
Hideo Tachibana
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