Title:
NITRIDE-FAMILY SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP3469847
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a nitride-family semiconductor device that has excellent element characteristics, and at the same time prevents cracks from occurring, and to provide its manufacturing method.
SOLUTION: A semiconductor laser element 100 successively laminates a buffer layer 2, an undoped GaN layer 3, an n-GaN contact layer 4, an n-AlGaN second cladding layer 5, an n-GaN first cladding layer 6, an MQW light emission layer 7, a p-GaN first cladding layer 8, a p-AlGaN second cladding layer 9, a p-GaN cap layer 10, a current rejection layer 13, and a p-GaN contact layer 11 on a sapphire substrate 1. The n-AlGaN second cladding layer 5 is made of n-A1GaN in a non-single crystal state. The layers 2 to 6, 6 to 11, and 13 consist of the nitride-family semiconductor with the single crystal state.
Inventors:
Masayuki Hata
Application Number:
JP2000084591A
Publication Date:
November 25, 2003
Filing Date:
March 24, 2000
Export Citation:
Assignee:
Sanyo Electric Co., Ltd.
International Classes:
H01L21/205; H01L31/10; H01L33/06; H01L33/12; H01L33/32; H01S5/323; H01S5/343; (IPC1-7): H01L21/205; H01L31/10; H01L33/00; H01S5/323
Domestic Patent References:
| JP918092A | ||||
| JP9199759A | ||||
| JP1065270A | ||||
| JP955560A | ||||
| JP870139A | ||||
| JP8222812A |
Attorney, Agent or Firm:
Masamasa Shibano